منابع مشابه
Fast Charge-Carrier Trapping in TiO2 Nanotubes
One-dimensional semiconductors such as nanowires and nanotubes are attractive materials for incorporation in photovoltaic devices as they potentially offer short percolation pathways to charge-collecting contacts. We report the observation of freeelectron lifetimes in TiO2 nanotubes of the order of tens of picoseconds. These lifetimes are surprisingly short compared to those determined in films...
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We investigated the optical properties of Ge nanocrystals surrounded by Ge3N4. The broad emission ranging from infrared to blue is due to the dependence on the crystal size and preparation methods. Here, we report high resolution Photoluminescence (PL) attributed to emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-photoluminescence and detailed using temperature a...
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Photoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurit...
متن کاملDynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.
Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step fu...
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The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due...
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ژورنال
عنوان ژورنال: Science
سال: 2010
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.330.6004.563-c